Global NAND Flash Market 2016-2021 Demand, Production, Gross Margin, SWOT Analysis, Manufacturers, Market Strategy
NAND flash thus uses floating-gate transistor, But They are connected in a way did Resembles a NAND gate: several transistors are connected in series, And the bit line is pulled low only if all the word lines are pulled high (above the transistors‘ VT). NOR-style bit line array in the same way that single transistors are linked in NOR flash.
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Compared to NOR flash, replacing single transistor with serial-linked groups adds to an extra level Of addressing. NOR flash might address memory by page then word, NAND flash might address it by page, word and bit. Bit-level addressing suits bit-serial applications (such as hard disk emulation), which is only one bit at a time. Execute-in-place applications, on the other hand, require every bit in a word. This requires word-level addressing. In any case, both bit and word addressing modes are possible with either NOR or NAND flash.
To readdata, the first group is selected (in the same way, a single transistor is selected from a NOR array). Next, most of the word lines are pulled up above the VT of a programmed bit, while one of them is pulled up to the VT of an erased bit. The series group will conduct (and pull the bit line low) if the selected bit has not been programmed.
Despite the additional transistors, the reduction in ground wires and bit lines allows a denser layout and greater storage capacity per chip. (NOR flash, which is used for a BIOS ROM, is expected to be Fault-free). Manufacturers try to maximize the amount of usable storage by shrinking the size of the transistors.
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This report Provides detailed analysis of worldwide markets for NAND Flash from 2011 to 2015 and Provides extensive market forecasts from 2016 to 2021 by region / country And subsectors. It covers the key technologies and market trends in the NAND Flash market and further analysis of the factors influencing the supply / demand for NAND Flash, and the opportunities / challenges Faced by industry participants. It also acts as an essential tool to companies.
Global NAND Flashmarket Outlook 2016-2021, has been prepared based on the synthesis, analysis, and interpretation of information about the global NAND Flash market collected from specified sources. The report covers key technological developments in the recent times and profiles. The competitive landscape section of the report provides a clear insight into the market. The major players in the global market are Samsung (South Korea), Toshiba (Japan), Micron (USA), SK Hynix (South Korea), among others.
The report provides separate comprehensive analytics for the North America, Europe, Asia-Pacific, Middle East and Africa and Rest of World. In this sector, NAND Flash industry has been provided.
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